Product Summary

The KM29W32000AT is a 4M × 8bit NAND Flash Memory with a spare 128K × 8bit. The KM29W32000AT’s NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250ms and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data.

Parametrics

KM29W32000AT absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN: -0.6 to +7.0 V; (2)Temperature Under Bias, TBIAS: -10 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Output Current, IOS: 5 mA.

Features

KM29W32000AT features: (1)Voltage Supply: 2.7V to 5.5V; (2)Organization, Memory Cell Array: (4M + 128K)bit x 8bit; Data Register: (512 + 16)bit x8bit; (3)Automatic Program and Erase, Page Program: (512 + 16)Byte; Block Erase: (8K + 256)Byte; Status Register; (4)528-Byte Page Read Operation, Random Access: 10ms(Max.); Serial Page Access: 50ns(Min.); (5)Fast Write Cycle Time, Program time: 250ms(typ.); Block Erase time: 2ms(typ.); (6)Command/Address/Data Multiplexed I/O port; (7)Hardware Data Protection, Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology, Endurance: 1M Program/Erase Cycles; Data Retention: 10 years; (9)Command Register Operation; (10)44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch); Forward Type.

Diagrams

KM29W32000AT block diagram

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