Product Summary

The KM2816A-25 is a 16,384 Bit EEPROM Electrically Erasable and Programmable Read-Only-Memory organized as 2,048 words by 8-bits. Its data can be modified using simple TTL level signals and a single 5 volt power supply. Writing data into the KM2816A-25 is very simple. The internally self-timed write cycle latches both address and data to provide a free system bus during the 10ms (max) write period. The KM2816A-25 is fabricated with the well defined floating gate NMOS technology using Fowler-Nordheim tunneling for erasing and programming.

Parametrics

KM2816A-25 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN: -1 to +7.0V; (2)Temperature Under Bias, bias: -40 to +85℃; (3)Storage Temperature, Tstg: -65 to +125℃; (4)Short Circuit Output Current, Ios: 5mA.

Features

KM2816A-25 features: (1)Simple Byte Write; (2)Single TTL Level Write Signal; Latched Address and Data; Automatic Internal Erase-before-Write; Automatic Write Timing; (3)Enhanced Write Protection; (4)Single 5 volt Supply; (5)Byte Write: 10ms max; (6)Fast Access Time: 250ns; (7)Power: 50mA-standby (max); 110mA-operating (max); (8)Two Line Control-EHminates Bus Contention; (9)10,000 Cycle Endurance; (10)JEDEC Byte-wide Memory Pinout.

Diagrams

KM2816A-25 block diagram