(China (Mainland))
Product Summary
The IS61LPS25636A-200TQLI is a high-speed, low-power synchronous static RAM designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS25636A-200TQLI is organized as 262,144 words by 36 bits. Fabricated with ISSI’s advanced CMOS technology, the IS61LPS25636A-200TQLI integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs of the IS61LPS25636A-200TQLI pass through registers controlled by a positive-edge-triggered single clock input.
Parametrics
IS61LPS25636A-200TQLI absolute maximum ratings: (1)Tstg, Storage Temperature: –55 to +150℃; (2)Pd, Power Dissipation: 1.6W; (3)IOUT, Output Current (per I/O): 100mA; (4)VIN, VOUT, Voltage Relative to Vss for I/O Pins: –0.5 to Vddq + 0.5V; (5)VIN, Voltage Relative to Vss for Address and Control Inputs: –0.5 to Vdd + 0.5V; (6)Vdd, Voltage on Vdd Supply Relative to Vss: –0.5 to 4.6V.
Features
IS61LPS25636A-200TQLI features: (1)Internal self-timed write cycle; (2)Individual Byte Write Control and Global Write; (3)Clock controlled, registered address, data and control; (4)Burst sequence control using MODE input; (5)Three chip enable option for simple depth expansion and address pipelining; (6)Common data inputs and data outputs; (7)Auto Power-down during deselect; (8)Single cycle deselect; (9)Snooze MODE for reduced-power standby; (10)JTAG Boundary Scan for PBGA package; (11)Power Supply: Vdd 3.3V±5%, Vddq 3.3V/2.5V±5%; (12)JEDEC 100-Pin TQFP, 119-ball PBGA, and 165-ball PBGA packages; (13)Lead-free available.
Diagrams
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 IS61LPS25636A-200TQLI |
ISSI |
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v |
Data Sheet |
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IS61LPS25636A-200TQLI-TR |
ISSI |
SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v |
Data Sheet |
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