(China (Mainland))
Product Summary
The IRFR2307Z is a Power MOSFET utilized the latest processing techniques to achieve extremely low on-resistance per silicon area. It is apecifically designed for Automotive applications. Additional features of the IRFR2307Z are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make the IRFR2307Z an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRFR2307Z absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 53A max; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 38A; (3)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Package Limited): 42A; (4)IDM, Pulsed Drain Current: 210A; (5)PD @TC = 25℃, Power Dissipation: 110W; (6)Linear Derating Factor: 0.70W/℃; (7)VGS, Gate-to-Source Voltage: ±20V; (8)EAS (Thermally limited), Single Pulse Avalanche Energy: 100mJ; (9)EAS (Tested ), Single Pulse Avalanche Energy Tested Value: 140mJ; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 175℃; (11)Soldering Temperature, for 10 seconds: 300℃; (12)Mounting Torque, 6-32 or M3 screw: 1.1Nm.
Features
IRFR2307Z features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax.
Diagrams
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 IRFR2307Z |
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MOSFET N-CH 75V 42A DPAK |
Data Sheet |
Negotiable |
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IRFR2307ZPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRFR2307ZTRLPBF |
International Rectifier |
MOSFET MOSFT 75V 53A 16mOhm 50nC Qg |
Data Sheet |
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