E28F400B5T80

Product Summary

The E28F400B5T80 is a Smart 5 boot block flash memory provided 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The E28F400B5T80’s asymmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for embedded code execution applications, such as networking infrastructure and office automation. Based on Intel’s boot block architecture, the Smart 5 boot block memory family enables quick and easy upgrades for designs that demand state-of-the-art technology.

Parametrics

E28F400B5T80 absolute maximum ratings: (1)Commercial Operating Temperature, During Read/Erase/Program: 0℃ to +70℃; Temperature Under Bias: -10℃ to +80℃; (2)Extended Operating Temperature, During Read/Erase/Program: -40℃ to +85℃; Temperature Under Bias: -40℃ to +85℃; (3)Storage Temperature: -65℃ to +125℃; (4)Voltage on Any Pin (except VCC, VPP, A9and RP#) with Respect to GND: -2.0 V to +7.0 V; (5)Voltage on Pin RP# or Pin A9 with Respect to GND: -2.0 V to +13.5 V; (6)VPPProgram Voltage with Respect to GND during Block Erase; (7)and Word/Byte Program: -2.0 V to +14.0 V; (8)VCC Supply Voltage with Respect to GND: -2.0 V to +7.0 V; (9)Output Short Circuit Current: 100 mA.

Features

E28F400B5T80 features: (1)SmartVoltage Technology, Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes; Increased Programming Throughput at 12 V VPP; (2)Very High-Performance Read, 2-, 4-Mbit: 60 ns Access Time; 8-Mbit: 70 ns Access Time; (3)x8 or x8/x16-Configurable Data Bus; (4)Low Power Consumption, Max 60 mA Read Current at 5 V; Auto Power Savings: <1 mA Typical Standby Current; (5)Optimized Array Blocking Architecture, 16-KB Protected Boot Block; Two 8-KB Parameter Blocks; 96-KB and 128-KB Main Blocks; Top or Bottom Boot Locations; (6)Extended Temperature Operation, -40℃ to +85℃; (7)Industry-Standard Packaging, 40, 48-Lead TSOP, 44-Lead PSOP; (8)Extended Block Erase Cycling, 100,000 Cycles at Commercial Temp; 10,000 Cycles at Extended Temp; (9)Hardware Data Protection Feature, Absolute Hardware-Protection for Boot Block; Write Lockout during Power Transitions; (10)Automated Word/Byte Program and Block Erase, Command User Interface; Status Registers; Erase Suspend Capability; (11)SRAM-Compatible Write Interface; (12)Reset/Deep Power-Down Input, Provides Low-Power Mode and; (13)Reset for Boot Operations; (14)Pinout Compatible 2, 4, and 8 Mbit; (15)ETOX Flash Technology, 0.6 μETOX IV Initial Production; 0.4 μETOX V Later Production.

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