Product Summary

The APT80GA90LD40 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. The APT80GA90LD40’s Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. The applications of the APT80GA90LD40 include ZVS phase shifted and other full bridge, Half bridge, High power PFC boost, Welding, UPS, solar, and other inverters, High frequency, high efficiency industrial.

Parametrics

APT80GA90LD40 absolute maximum ratings: (1)Collector Emitter Voltage, Vces: 900 V; (2)Continuous Collector Current @ TC = 25℃, IC: 145A; (3)Continuous Collector Current @ TC = 100℃, IC: 80A; (4)Pulsed Collector Current, ICM: 239A; (5)Gate-Emitter Voltage, VGE: ±30 V; (6)Total Power Dissipation @ TC = 25℃, PD: 625 W; (7)Switching Safe Operating Area @ TJ = 150℃, SSOA: 239A @ 900V; (8)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to 150℃; (9)Lead Temperature for Soldering: 0.063" from Case for 10 Seconds, TL: 300℃.

Features

APT80GA90LD40 features: (1)Fast switching with low EMI; (2)Very Low Eoff for maximum efficiency; (3)Ultra low Cres for improved noise immunity; (4)Low conduction loss; (5)Low gate charge; (6)Increased intrinsic gate resistance for low EMI; (7)RoHS compliant.

Diagrams

APT80GA90LD40 block diagram

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